DETAILED NOTES ON GERMANIUM

Detailed Notes on Germanium

s is usually that on the substrate material. The lattice mismatch brings about a big buildup of pressure Power in Ge layers epitaxially developed on Si. This pressure Strength is mainly relieved by two mechanisms: (i) generation of lattice dislocations in the interface (misfit dislocations) and (ii) elastic deformation of both the substrate plus th

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